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Product details

DMN1032UCB4-7

Availability on request

Manufacturer: Diodes Incorporated
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

N-Channel 12 V 4.8A (Ta) 900mW (Ta) Surface Mount U-WLB1010-4

Datasheet Not provided

Specifications

Base Product Number: DMN1032
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Drain to Source Voltage (Vdss): 12 V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 6 V
Mfr: Diodes Incorporated
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: 4-UFBGA, WLBGA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 1A, 4.5V
Series: -
Supplier Device Package: U-WLB1010-4
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±8V
Vgs(th) (Max) @ Id: 1.2V @ 250µA