STFI11N65M2 product image

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Product details

STFI11N65M2

Availability on request

Manufacturer: STMicroelectronics
Category: Transistors - FETs, MOSFETs - Single
Package: I2PAKFP (TO-281)

Description

N-Channel 650 V 7A (Tc) 25W (Tc) Through Hole I2PAKFP (TO-281)

Datasheet View datasheet

Specifications

Base Product Number: STFI11N
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 650 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
Mfr: STMicroelectronics
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Package: Tube
Package / Case: TO-262-3 Full Pack, I²Pak
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 670mOhm @ 3.5A, 10V
Series: MDmesh™ II Plus
Supplier Device Package: I2PAKFP (TO-281)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±25V
Vgs(th) (Max) @ Id: 4V @ 250µA