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Product details

IRFS4321-7PPBF

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: D2PAK (7-Lead)

Description

N-Channel 150 V 86A (Tc) 350W (Tc) Surface Mount D2PAK (7-Lead)

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Drain to Source Voltage (Vdss): 150 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4460 pF @ 50 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Power Dissipation (Max): 350W (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 34A, 10V
Series: HEXFET®
Supplier Device Package: D2PAK (7-Lead)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 5V @ 250µA