Goford Semiconductor
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Product details
C2M0280120D
Availability on request
Description
N-Channel 1200 V 10A (Tc) 62.5W (Tc) Through Hole TO-247-3
Datasheet
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Specifications
- Base Product Number
- C2M0280120
- Current - Continuous Drain (Id) @ 25°C
- 10A (Tc)
- Drain to Source Voltage (Vdss)
- 1200 V
- Drive Voltage (Max Rds On, Min Rds On)
- 20V
- FET Feature
- -
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 20.4 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds
- 259 pF @ 1000 V
- Mfr
- Wolfspeed, Inc.
- Mounting Type
- Through Hole
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Package
- Tube
- Package / Case
- TO-247-3
- Power Dissipation (Max)
- 62.5W (Tc)
- Rds On (Max) @ Id, Vgs
- 370mOhm @ 6A, 20V
- Series
- Z-FET™
- Supplier Device Package
- TO-247-3
- Technology
- SiCFET (Silicon Carbide)
- Vgs (Max)
- +25V, -10V
- Vgs(th) (Max) @ Id
- 2.8V @ 1.25mA (Typ)