2N7008-G product image

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Product details

2N7008-G

Availability on request

Manufacturer: Microchip Technology
Category: Transistors - FETs, MOSFETs - Single
Package: TO-92-3

Description

N-Channel 60 V 230mA (Tj) 1W (Tc) Through Hole TO-92-3

Datasheet View datasheet

Specifications

Base Product Number: 2N7008
Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
FET Feature: -
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Mfr: Microchip Technology
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Series: -
Supplier Device Package: TO-92-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 2.5V @ 250µA