2N6661 product image

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Product details

2N6661

Availability on request

Manufacturer: Microchip Technology
Category: Transistors - FETs, MOSFETs - Single
Package: Bag

Description

N-Channel 90 V 350mA (Tj) 6.25W (Tc) Through Hole TO-39

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Drain to Source Voltage (Vdss): 90 V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
FET Feature: -
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 24 V
Mfr: Microchip Technology
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Bag
Package / Case: TO-205AD, TO-39-3 Metal Can
Power Dissipation (Max): 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Series: -
Supplier Device Package: TO-39
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 1mA