SI1308EDL-T1-GE3 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

SI1308EDL-T1-GE3

Availability on request

Manufacturer: Vishay Siliconix
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

N-Channel 30 V 1.4A (Tc) 400mW (Ta), 500mW (Tc) Surface Mount SC-70-3

Datasheet View datasheet

Specifications

Base Product Number: SI1308
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 15 V
Mfr: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: SC-70, SOT-323
Power Dissipation (Max): 400mW (Ta), 500mW (Tc)
Rds On (Max) @ Id, Vgs: 132mOhm @ 1.4A, 10V
Series: TrenchFET®
Supplier Device Package: SC-70-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±12V
Vgs(th) (Max) @ Id: 1.5V @ 250µA