IRFB7537PBF product image

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Product details

IRFB7537PBF

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: TO-220AB

Description

N-Channel 60 V 173A (Tc) 230W (Tc) Through Hole TO-220AB

Datasheet View datasheet

Specifications

Base Product Number: IRFB7537
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-220-3
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Series: HEXFET®, StrongIRFET™
Supplier Device Package: TO-220AB
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3.7V @ 150µA