RFP12N10L product image

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Product details

RFP12N10L

Availability on request

Manufacturer: onsemi
Category: Transistors - FETs, MOSFETs - Single
Package: TO-220-3

Description

N-Channel 100 V 12A (Tc) 60W (Tc) Through Hole TO-220-3

Datasheet View datasheet

Specifications

Base Product Number: RFP12N10
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 5V
FET Feature: -
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Mfr: onsemi
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-220-3
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 12A, 5V
Series: -
Supplier Device Package: TO-220-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 2V @ 250µA