- Base Product Number
- RFD30
- Current - Continuous Drain (Id) @ 25°C
- 11A (Tc)
- Drain to Source Voltage (Vdss)
- 60 V
- Drive Voltage (Max Rds On, Min Rds On)
- 5V
- FET Feature
- -
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 11.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds
- 350 pF @ 25 V
- Mfr
- onsemi
- Mounting Type
- Surface Mount
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Package
- Tube
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation (Max)
- 38W (Tc)
- Rds On (Max) @ Id, Vgs
- 107mOhm @ 8A, 5V
- Series
- -
- Supplier Device Package
- TO-252AA
- Technology
- MOSFET (Metal Oxide)
- Vgs (Max)
- ±16V
- Vgs(th) (Max) @ Id
- 3V @ 250µA