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IRFD9123 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

IRFD9123

Availability on request

Manufacturer
Vishay Siliconix
Category
Transistors - FETs, MOSFETs - Single
Package
4-HVMDIP

Description

P-Channel 100 V 1A (Ta) Through Hole 4-HVMDIP

Datasheet Not provided
Specifications
Base Product Number
IRFD9123
Current - Continuous Drain (Id) @ 25°C
1A (Ta)
Drain to Source Voltage (Vdss)
100 V
FET Feature
-
FET Type
P-Channel
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
390 pF @ 25 V
Mfr
Vishay Siliconix
Mounting Type
Through Hole
Operating Temperature
-
Package
Tube
Package / Case
4-DIP (0.300", 7.62mm)
Power Dissipation (Max)
-
Rds On (Max) @ Id, Vgs
600mOhm @ 600mA, 10V
Series
-
Supplier Device Package
4-HVMDIP
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
4V @ 250µA