IRFD113 product image

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Product details

IRFD113

Availability on request

Manufacturer: Vishay Siliconix
Category: Transistors - FETs, MOSFETs - Single
Package: 4-HVMDIP

Description

N-Channel 60 V 800mA (Tc) 1W (Tc) Through Hole 4-HVMDIP

Datasheet View datasheet

Specifications

Base Product Number: IRFD113
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Mfr: Vishay Siliconix
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 800mA, 10V
Series: -
Supplier Device Package: 4-HVMDIP
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA