IRF7701TR product image

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Product details

IRF7701TR

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: 8-TSSOP

Description

P-Channel 12 V 10A (Tc) 1.5W (Ta) Surface Mount 8-TSSOP

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 12 V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
FET Feature: -
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 10 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 4.5V
Series: HEXFET®
Supplier Device Package: 8-TSSOP
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±8V
Vgs(th) (Max) @ Id: 1.2V @ 250µA