IRF5805 product image

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Product details

IRF5805

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Micro6™(TSOP-6)

Description

P-Channel 30 V 3.8A (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6)

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 511 pF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Package: Tube
Package / Case: SOT-23-6 Thin, TSOT-23-6
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 3.8A, 10V
Series: HEXFET®
Supplier Device Package: Micro6™(TSOP-6)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.5V @ 250µA