IRF5806 product image

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Product details

IRF5806

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Micro6™(TSOP-6)

Description

P-Channel 20 V 4A (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6)

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 20 V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
FET Feature: -
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 594 pF @ 15 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: SOT-23-6 Thin, TSOT-23-6
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 86mOhm @ 4A, 4.5V
Series: HEXFET®
Supplier Device Package: Micro6™(TSOP-6)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 1.2V @ 250µA