IRFP3703 product image

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Product details

IRFP3703

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: TO-247AC

Description

N-Channel 30 V 210A (Tc) 3.8W (Ta), 230W (Tc) Through Hole TO-247AC

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 209 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Bag
Package / Case: TO-247-3
Power Dissipation (Max): 3.8W (Ta), 230W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 76A, 10V
Series: HEXFET®
Supplier Device Package: TO-247AC
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA