2N6849 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

2N6849

Availability on request

Manufacturer: Microsemi Corporation
Category: Transistors - FETs, MOSFETs - Single
Package: Bulk

Description

P-Channel 100 V 6.5A (Tc) 800mW (Ta), 25W (Tc) Through Hole TO-39

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
Mfr: Microsemi Corporation
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Bulk
Package / Case: TO-205AF Metal Can
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V
Series: -
Supplier Device Package: TO-39
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA