- Current - Continuous Drain (Id) @ 25°C
- 14A (Tc)
- Drain to Source Voltage (Vdss)
- 400 V
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- FET Feature
- -
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 110 nC @ 10 V
- Mfr
- Microsemi Corporation
- Mounting Type
- Surface Mount
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Package
- Bulk
- Package / Case
- TO-267AB
- Power Dissipation (Max)
- 4W (Ta), 150W (Tc)
- Rds On (Max) @ Id, Vgs
- 315mOhm @ 9A, 10V
- Series
- -
- Supplier Device Package
- TO-267AB
- Technology
- MOSFET (Metal Oxide)
- Vgs (Max)
- ±20V
- Vgs(th) (Max) @ Id
- 4V @ 250µA