JANTXV2N6800 package illustration

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

JANTXV2N6800

Availability on request

Manufacturer: Microsemi Corporation
Category: Transistors - FETs, MOSFETs - Single
Package: TO-205AF (TO-39)

Description

N-Channel 400 V 3A (Tc) 800mW (Ta), 25W (Tc) Through Hole TO-205AF (TO-39)

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drain to Source Voltage (Vdss): 400 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 34.75 nC @ 10 V
Mfr: Microsemi Corporation
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Bulk
Package / Case: TO-205AF Metal Can
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3A, 10V
Series: Military, MIL-PRF-19500/557
Supplier Device Package: TO-205AF (TO-39)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA