PSMN6R3-120ESQ product image

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Product details

PSMN6R3-120ESQ

Availability on request

Manufacturer: Nexperia USA Inc.
Category: Transistors - FETs, MOSFETs - Single
Package: I2PAK

Description

N-Channel 120 V 70A (Tc) 405W (Tc) Through Hole I2PAK

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drain to Source Voltage (Vdss): 120 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 207.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11384 pF @ 60 V
Mfr: Nexperia USA Inc.
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Power Dissipation (Max): 405W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 25A, 10V
Series: -
Supplier Device Package: I2PAK
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA