STP18NM60ND product image

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Product details

STP18NM60ND

Availability on request

Manufacturer: STMicroelectronics
Category: Transistors - FETs, MOSFETs - Single
Package: TO-220

Description

N-Channel 600 V 13A (Tc) 110W (Tc) Through Hole TO-220

Datasheet View datasheet

Specifications

Base Product Number: STP18
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drain to Source Voltage (Vdss): 600 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 50 V
Mfr: STMicroelectronics
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Package: Tube
Package / Case: TO-220-3
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Series: FDmesh™ II
Supplier Device Package: TO-220
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±25V
Vgs(th) (Max) @ Id: 5V @ 250µA