STH3N150-2 product image

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Product details

STH3N150-2

Availability on request

Manufacturer: STMicroelectronics
Category: Transistors - FETs, MOSFETs - Single
Package: H²PAK

Description

N-Channel 1500 V 2.5A (Tc) 140W (Tc) Surface Mount H²PAK

Datasheet View datasheet

Specifications

Base Product Number: STH3N150
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drain to Source Voltage (Vdss): 1500 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 25 V
Mfr: STMicroelectronics
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 1.3A, 10V
Series: PowerMESH™
Supplier Device Package: H²PAK
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 5V @ 250µA