IPW60R190P6FKSA1 product image

Image shown for reference only. Refer to the product datasheet for exact specifications.

Product details

IPW60R190P6FKSA1

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: PG-TO247-3

Description

N-Channel 600 V 20.2A (Tc) 151W (Tc) Through Hole PG-TO247-3

Datasheet View datasheet

Specifications

Base Product Number: IPW60R190
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Drain to Source Voltage (Vdss): 600 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
Mfr: Infineon Technologies
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-247-3
Power Dissipation (Max): 151W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Series: CoolMOS™ P6
Supplier Device Package: PG-TO247-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4.5V @ 630µ