IRFHM4234TRPBF product image

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Product details

IRFHM4234TRPBF

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: 8-TQFN Exposed Pad

Description

N-Channel 25 V 20A (Ta) 2.8W (Ta), 28W (Tc) Surface Mount

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drain to Source Voltage (Vdss): 25 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1011 pF @ 13 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: 8-TQFN Exposed Pad
Power Dissipation (Max): 2.8W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 10V
Series: FASTIRFET™, HEXFET®
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.1V @ 25µA