- Base Product Number
- PSMN3R3
- Current - Continuous Drain (Id) @ 25°C
- 130A (Tc)
- Drain to Source Voltage (Vdss)
- 60 V
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- FET Feature
- -
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 95 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds
- 10115 pF @ 25 V
- Mfr
- Nexperia USA Inc.
- Mounting Type
- Through Hole
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Package
- Tube
- Package / Case
- TO-220-3
- Power Dissipation (Max)
- 293W (Tc)
- Rds On (Max) @ Id, Vgs
- 3.4mOhm @ 25A, 10V
- Series
- -
- Supplier Device Package
- TO-220AB
- Technology
- MOSFET (Metal Oxide)
- Vgs (Max)
- ±20V
- Vgs(th) (Max) @ Id
- 2.1V @ 1mA