- Base Product Number
- STP110
- Current - Continuous Drain (Id) @ 25°C
- 110A (Tc)
- Drain to Source Voltage (Vdss)
- 100 V
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- FET Feature
- -
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 60 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds
- 5500 pF @ 50 V
- Mfr
- STMicroelectronics
- Mounting Type
- Through Hole
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Package
- Tube
- Package / Case
- TO-220-3
- Power Dissipation (Max)
- 150W (Tc)
- Rds On (Max) @ Id, Vgs
- 7mOhm @ 55A, 10V
- Series
- DeepGATE™, STripFET™ VII
- Supplier Device Package
- TO-220
- Technology
- MOSFET (Metal Oxide)
- Vgs (Max)
- ±20V
- Vgs(th) (Max) @ Id
- 4V @ 250µA