IRFHM8329TRPBF product image

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Product details

IRFHM8329TRPBF

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: PQFN (3x3)

Description

N-Channel 30 V 16A (Ta), 57A (Tc) 2.6W (Ta), 33W (Tc) Surface Mount PQFN (3x3)

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 57A (Tc)
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 10 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: 8-PowerTDFN
Power Dissipation (Max): 2.6W (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Series: HEXFET®
Supplier Device Package: PQFN (3x3)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.2V @ 25µA