- Base Product Number
- STP10
- Current - Continuous Drain (Id) @ 25°C
- 10A (Tc)
- Drain to Source Voltage (Vdss)
- 60 V
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- FET Feature
- -
- FET Type
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 6.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds
- 340 pF @ 48 V
- Mfr
- STMicroelectronics
- Mounting Type
- Through Hole
- Operating Temperature
- 175°C (TJ)
- Package
- Tube
- Package / Case
- TO-220-3
- Power Dissipation (Max)
- 30W (Tc)
- Rds On (Max) @ Id, Vgs
- 160mOhm @ 5A, 10V
- Series
- DeepGATE™, STripFET™ VI
- Supplier Device Package
- TO-220
- Technology
- MOSFET (Metal Oxide)
- Vgs (Max)
- ±20V
- Vgs(th) (Max) @ Id
- 4V @ 250µA