TK12A60W,S4VX product image

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Product details

TK12A60W,S4VX

Availability on request

Manufacturer: Toshiba Semiconductor and Storage
Category: Transistors - FETs, MOSFETs - Single
Package: TO-220SIS

Description

N-Channel 600 V 11.5A (Ta) 35W (Tc) Through Hole TO-220SIS

Datasheet Not provided

Specifications

Base Product Number: TK12A60
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Drain to Source Voltage (Vdss): 600 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: Super Junction
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Mfr: Toshiba Semiconductor and Storage
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Package: Tube
Package / Case: TO-220-3 Full Pack
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V
Series: DTMOSIV
Supplier Device Package: TO-220SIS
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 3.7V @ 600µA