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Product details

IRFI9610G

Availability on request

Manufacturer
Vishay Siliconix
Category
Transistors - FETs, MOSFETs - Single
Package
Tube

Description

P-Channel 200 V 2A (Tc) 27W (Tc) Through Hole TO-220-3

Datasheet Not provided
Specifications
Base Product Number
IRFI9610
Current - Continuous Drain (Id) @ 25°C
2A (Tc)
Drain to Source Voltage (Vdss)
200 V
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
FET Type
P-Channel
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
180 pF @ 25 V
Mfr
Vishay Siliconix
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Package
Tube
Package / Case
TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max)
27W (Tc)
Rds On (Max) @ Id, Vgs
3Ohm @ 1.2A, 10V
Series
-
Supplier Device Package
TO-220-3
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
4V @ 250µA