IRF7534D1 product image

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Product details

IRF7534D1

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Micro8™

Description

P-Channel 20 V 4.3A (Ta) 1.25W (Ta) Surface Mount Micro8™

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Drain to Source Voltage (Vdss): 20 V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
FET Feature: Schottky Diode (Isolated)
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 10 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V
Series: FETKY™
Supplier Device Package: Micro8™
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±12V
Vgs(th) (Max) @ Id: 1.2V @ 250µA