IRLML5203 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

IRLML5203

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Micro3™/SOT-23

Description

P-Channel 30 V 3A (Ta) 1.25W (Ta) Surface Mount Micro3™/SOT-23

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Package: Tube
Package / Case: TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 3A, 10V
Series: HEXFET®
Supplier Device Package: Micro3™/SOT-23
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.5V @ 250µA