IXTH2N170D2 product image

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Product details

IXTH2N170D2

Availability on request

Manufacturer: IXYS
Category: Transistors - FETs, MOSFETs - Single
Package: TO-247 (IXTH)

Description

N-Channel 1700 V 2A (Tj) 568W (Tc) Through Hole TO-247 (IXTH)

Datasheet View datasheet

Specifications

Base Product Number: IXTH2
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Drain to Source Voltage (Vdss): 1700 V
Drive Voltage (Max Rds On, Min Rds On): 0V
FET Feature: Depletion Mode
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 10 V
Mfr: IXYS
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-247-3
Power Dissipation (Max): 568W (Tc)
Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1A, 0V
Series: Depletion
Supplier Device Package: TO-247 (IXTH)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: -