IRF7521D1 product image

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Product details

IRF7521D1

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Micro8™

Description

N-Channel 20 V 2.4A (Ta) 1.3W (Ta) Surface Mount Micro8™

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Drain to Source Voltage (Vdss): 20 V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
FET Feature: Schottky Diode (Isolated)
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 15 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 4.5V
Series: FETKY™
Supplier Device Package: Micro8™
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±12V
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)