IRFU18N15D product image

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Product details

IRFU18N15D

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: IPAK (TO-251AA)

Description

N-Channel 150 V 18A (Tc) 110W (Tc) Through Hole IPAK (TO-251AA)

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 150 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Series: HEXFET®
Supplier Device Package: IPAK (TO-251AA)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 5.5V @ 250µA