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Product details

IRL3302S

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 20 V 39A (Tc) 57W (Tc) Surface Mount D2PAK

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Drain to Source Voltage (Vdss): 20 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 23A, 7V
Series: HEXFET®
Supplier Device Package: D2PAK
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)