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Product details

AOW4S60

Availability on request

Manufacturer: Alpha & Omega Semiconductor Inc.
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 600 V 4A (Tc) 83W (Tc) Through Hole TO-262

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 600 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 263 pF @ 100 V
Mfr: Alpha & Omega Semiconductor Inc.
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2A, 10V
Series: aMOS™
Supplier Device Package: TO-262
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 4.1V @ 250µA