IRF8306MTR1PBF product image

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Product details

IRF8306MTR1PBF

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: DirectFET™ Isometric MX

Description

N-Channel 30 V 23A (Ta), 140A (Tc) 2.1W (Ta), 75W (Tc) Surface Mount DirectFET™ Isometric MX

Datasheet View datasheet

Specifications

Base Product Number: IRF8306
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 140A (Tc)
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: Schottky Diode (Body)
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4110 pF @ 15 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: DirectFET™ Isometric MX
Power Dissipation (Max): 2.1W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 23A, 10V
Series: HEXFET®
Supplier Device Package: DirectFET™ Isometric MX
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.35V @ 100µA