DMP1022UFDE-7 product image

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Product details

DMP1022UFDE-7

Availability on request

Manufacturer: Diodes Incorporated
Category: Transistors - FETs, MOSFETs - Single
Package: U-DFN2020-6 (Type E)

Description

P-Channel 12 V 9.1A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type E)

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
Drain to Source Voltage (Vdss): 12 V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
FET Feature: -
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 42.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2953 pF @ 4 V
Mfr: Diodes Incorporated
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: 6-PowerUDFN
Power Dissipation (Max): 660mW (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V
Series: -
Supplier Device Package: U-DFN2020-6 (Type E)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±8V
Vgs(th) (Max) @ Id: 800mV @ 250µA