IPB180N03S4LH0ATMA1 product image

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Product details

IPB180N03S4LH0ATMA1

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: PG-TO263-7-3

Description

N-Channel 30 V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7-3

Datasheet View datasheet

Specifications

Base Product Number: IPB180
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tape & Reel (TR)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 100A, 10V
Series: OptiMOS™
Supplier Device Package: PG-TO263-7-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±16V
Vgs(th) (Max) @ Id: 2.2V @ 200µA