PSMN016-100XS,127 product image

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Product details

PSMN016-100XS,127

Availability on request

Manufacturer: NXP USA Inc.
Category: Transistors - FETs, MOSFETs - Single
Package: TO-220F

Description

N-Channel 100 V 32.1A (Tc) 46.1W (Tc) Through Hole TO-220F

Datasheet Not provided

Specifications

Base Product Number: PSMN0
Current - Continuous Drain (Id) @ 25°C: 32.1A (Tc)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 46.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2404 pF @ 50 V
Mfr: NXP USA Inc.
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max): 46.1W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Series: -
Supplier Device Package: TO-220F
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 1mA