IXFH18N100Q3 product image

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Product details

IXFH18N100Q3

Availability on request

Manufacturer: IXYS
Category: Transistors - FETs, MOSFETs - Single
Package: TO-247AD (IXFH)

Description

N-Channel 1000 V 18A (Tc) 830W (Tc) Through Hole TO-247AD (IXFH)

Datasheet View datasheet

Specifications

Base Product Number: IXFH18
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 1000 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4890 pF @ 25 V
Mfr: IXYS
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-247-3
Power Dissipation (Max): 830W (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 9A, 10V
Series: HiPerFET™, Q3 Class
Supplier Device Package: TO-247AD (IXFH)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 6.5V @ 4mA