- Base Product Number
- SSM3K36
- Current - Continuous Drain (Id) @ 25°C
- 500mA (Ta)
- Drain to Source Voltage (Vdss)
- 20 V
- Drive Voltage (Max Rds On, Min Rds On)
- 1.5V, 5V
- FET Feature
- -
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 1.23 nC @ 4 V
- Input Capacitance (Ciss) (Max) @ Vds
- 46 pF @ 10 V
- Mfr
- Toshiba Semiconductor and Storage
- Mounting Type
- Surface Mount
- Operating Temperature
- 150°C (TJ)
- Package
- Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
- Package / Case
- SOT-723
- Power Dissipation (Max)
- 150mW (Ta)
- Rds On (Max) @ Id, Vgs
- 630mOhm @ 200mA, 5V
- Series
- U-MOSIII
- Supplier Device Package
- VESM
- Technology
- MOSFET (Metal Oxide)
- Vgs (Max)
- ±10V
- Vgs(th) (Max) @ Id
- 1V @ 1mA