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Product details

IRLI2203N

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 30 V 61A (Tc) 47W (Tc) Through Hole PG-TO220-FP

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-220-3 Full Pack
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 37A, 10V
Series: HEXFET®
Supplier Device Package: PG-TO220-FP
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±16V
Vgs(th) (Max) @ Id: 1V @ 250µA