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STP180N10F3 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

STP180N10F3

Availability on request

Manufacturer
STMicroelectronics
Category
Transistors - FETs, MOSFETs - Single
Package
TO-220

Description

N-Channel 100 V 120A (Tc) 315W (Tc) Through Hole TO-220

Specifications
Base Product Number
STP180
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drain to Source Voltage (Vdss)
100 V
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
114.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
6665 pF @ 25 V
Mfr
STMicroelectronics
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Package
Tube
Package / Case
TO-220-3
Power Dissipation (Max)
315W (Tc)
Rds On (Max) @ Id, Vgs
5.1mOhm @ 60A, 10V
Series
STripFET™ III
Supplier Device Package
TO-220
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
4V @ 250µA