SI7888DP-T1-GE3 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

SI7888DP-T1-GE3

Availability on request

Manufacturer: Vishay Siliconix
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR)

Description

N-Channel 30 V 9.4A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8

Datasheet View datasheet

Specifications

Base Product Number: SI7888
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V
Mfr: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 12.4A, 10V
Series: TrenchFET®
Supplier Device Package: PowerPAK® SO-8
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±12V
Vgs(th) (Max) @ Id: 2V @ 250µA