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Product details

SI7882DP-T1-E3

Availability on request

Manufacturer: Vishay Siliconix
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR)

Description

N-Channel 12 V 13A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Datasheet Not provided

Specifications

Base Product Number: SI7882
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drain to Source Voltage (Vdss): 12 V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Mfr: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 17A, 4.5V
Series: TrenchFET®
Supplier Device Package: PowerPAK® SO-8
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±8V
Vgs(th) (Max) @ Id: 1.4V @ 250µA