SI7452DP-T1-E3 product image

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Product details

SI7452DP-T1-E3

Availability on request

Manufacturer: Vishay Siliconix
Category: Transistors - FETs, MOSFETs - Single
Package: PowerPAK® SO-8

Description

N-Channel 60 V 11.5A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Datasheet View datasheet

Specifications

Base Product Number: SI7452
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Mfr: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 19.3A, 10V
Series: TrenchFET®
Supplier Device Package: PowerPAK® SO-8
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4.5V @ 250µA