SI4462DY-T1-GE3 product image

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Product details

SI4462DY-T1-GE3

Availability on request

Manufacturer: Vishay Siliconix
Category: Transistors - FETs, MOSFETs - Single
Package: 8-SOIC

Description

N-Channel 200 V 1.15A (Ta) 1.3W (Ta) Surface Mount 8-SOIC

Datasheet View datasheet

Specifications

Base Product Number: SI4462
Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta)
Drain to Source Voltage (Vdss): 200 V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Mfr: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1.5A, 10V
Series: TrenchFET®
Supplier Device Package: 8-SOIC
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA