SI4166DY-T1-GE3 product image

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Product details

SI4166DY-T1-GE3

Availability on request

Manufacturer: Vishay Siliconix
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

N-Channel 30 V 30.5A (Tc) 3W (Ta), 6.5W (Tc) Surface Mount 8-SOIC

Datasheet View datasheet

Specifications

Base Product Number: SI4166
Current - Continuous Drain (Id) @ 25°C: 30.5A (Tc)
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 15 V
Mfr: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Power Dissipation (Max): 3W (Ta), 6.5W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 15A, 10V
Series: TrenchFET®
Supplier Device Package: 8-SOIC
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.4V @ 250µA